Leakage in Nanometer CMOS Technologies

Covers in detail prom来促露既ising solutions at the device, circuit, and architecture levels o滑限端础白际f abstraction after first explaining the sensitivity of the various MOS leakage sources to these conditions from the fir来自st principl360百科es. Also treated are the re曲有运情阿sulting effects so the reader understands the effectiveness of leakage power reduction solutions under these different conditions.

• 中文名 Leakage in Nanometer CMOS Technologies
• 定价 $ 168.37
• 作者 Narendra, Siva G.; Chandrakasan, Anantha P.;
• 出版时间 2010-11
• 页数 320

内容简介

　　Covers in detail promising solutions at the device, circuit, and ar极杀军员船等chitecture levels of abstraction after first explaining the sensitivity of th离审运全没迅他乡段训叫e various MOS leakage sources to these conditions from the first principles. Also treated are the resulting effects so the reader understands the effectiven来自ess of leakage power reduction solutions under these different conditions. (原文)

　　Case studies supply real360百科-world examples that reap the benefits of leakage power reduction solutions as the book highlights different device design choices that e企训雷xist to mit装另混多那igate increases in the leakage components as technology scales. (原文)